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| NGP8203N Ignition IGBT 20 A, 400 V, N-Channel TO-220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. Features http://onsemi.com * Ideal for Coil-on-Plug and Driver-on-Coil Applications * Gate-Emitter ESD Protection * Temperature Compensated Gate-Collector Voltage Clamp Limits * * * * * Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE) 20 AMPS 400 VOLTS VCE(on) = 1.3 V @ IC = 10 A, VGE . 4.5 V C G RG RGE Applications * Ignition Systems MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current-Continuous @ TC = 25C - Pulsed Continuous Gate Current Transient Gate Current (t2 ms, f100 Hz) ESD (Charged-Device Model) ESD (Human Body Model) R = 1500 W, C = 100 pF ESD (Machine Model) R = 0 W, C = 200 pF Total Power Dissipation @ TC = 25C Derate above 25C Operating & Storage Temperature Range Symbol VCES VCER VGE IC IG IG ESD ESD ESD PD TJ, Tstg Value 440 440 "15 20 50 1.0 20 2.0 8.0 500 150 1.0 -55 to +175 Unit V V V ADC AAC mA mA kV kV V Watts W/C C TO-220 CASE 221A STYLE 9 E MARKING DIAGRAM NGP 8203N YWW 1 G CE NGP8203N = Device Code Y = Year WW = Work Week ORDERING INFORMATION Device NGP8203N Package TO-220 Shipping 50 Units / Rail Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2006 August, 2006 - Rev. 1 1 Publication Order Number: NGP8203N/D NGP8203N UNCLAMPED COLLECTOR-TO-EMITTER AVALANCHE CHARACTERISTICS (-55 TJ 175C) Characteristic Single Pulse Collector-to-Emitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 16.7 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.9 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 150C VCC = 50 V, VGE = 5.0 V, Pk IL = 14.1 A, RG = 1000 W, L = 1.8 mH, Starting TJ = 175C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Temperature for Soldering Purposes, 1/8 from case for 5 seconds (Note 1) 1. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D. RqJC RqJA TL 1.0 62.5 275 C/W C/W C Symbol EAS Value 250 200 180 2000 Unit mJ EAS(R) mJ ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Clamp Voltage BVCES ICES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current VGE = 0 V, VCE = 15 V VCE = 200 V, VGE = 0 V Reverse Collector-Emitter Clamp Voltage BVCES(R) IC = -75 mA ICES(R) VCE = -24 V BVGES IGES RG RGE VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) *Maximum Value of Characteristic across Temperature Range. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. IG = "5.0 mA VGE = "5.0 V TJ = -40C to 175C TJ = -40C to 175C TJ = 25C TJ = 25C TJ = 175C TJ = -40C TJ = 25C TJ = 175C TJ = -40C Reverse Collector-Emitter Leakage Current TJ = 25C TJ = 175C TJ = -40C Gate-Emitter Clamp Voltage Gate-Emitter Leakage Current Gate Resistor (Optional) Gate-Emitter Resistor ON CHARACTERISTICS (Note 2) Gate Threshold Voltage TJ = 25C TJ = 175C TJ = -40C 1.5 0.7 1.7 4.0 1.8 1.0 2.0 4.6 2.1 1.3 2.3* 5.2 mV/C V TJ = -40C to 175C TJ = -40C to 175C TJ = -40C to 175C TJ = -40C to 175C 14.25 0.5 1.0 0.4 30 35 30 0.05 1.0 0.005 12 200 370 390 395 415 0.1 1.5 25 0.8 35 39 33 0.1 5.0 0.01 12.5 300 70 16 25 420 440 1.0 10 100* 5.0 39 45* 37 0.5 10* 0.1 14 350* V mA W kW mA V mA mA V Symbol Test Conditions Temperature Min Typ Max Unit http://onsemi.com 2 NGP8203N ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 3) Collector-to-Emitter On-Voltage VCE(on) IC = 6.5 A, VGE = 3.7 V TJ = 25C TJ = 175C TJ = -40C TJ = 25C IC = 9.0 A, VGE = 3.9 V TJ = 175C TJ = -40C TJ = 25C IC = 7.5 A, VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 10 A, VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 15 A, VGE = 4.5 V TJ = 175C TJ = -40C TJ = 25C IC = 20 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS Turn-Off Delay Time (Resistive) td(off) tf td(off) tf td(on) tr VCC = 14 V, IC = 9.0 A RG = 1.0 kW, RL = 1.5 W, VGE = 5.0 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, L = 300 mH, VGE = 5.0 V VCC = 300 V, IC = 9.0 A RG = 1.0 kW, RL = 33 W, VGE = 5.0 V TJ = 25C TJ = 175C TJ = 25C TJ = 175C Turn-Off Delay Time (Inductive) TJ = 25C TJ = 175C TJ = 25C TJ = 175C Turn-On Delay Time TJ = 25C TJ = 175C TJ = 25C TJ = 175C *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%. 6.0 6.0 4.0 8.0 3.0 5.0 1.5 5.0 1.0 1.0 4.0 3.0 8.0 8.0 6.0 10.5 5.0 7.0 3.0 7.0 1.5 1.5 6.0 5.0 10 10 8.0 14 7.0 9.0 4.5 10 2.0 2.0 8.0 7.0 mSec CISS COSS CRSS f = 10 kHz, VCE = 25 V TJ = 25C 1100 70 18 1300 80 20 1500 90 22 pF gfs IC = 6.0 A, VCE = 5.0 V TJ = 175C TJ = -40C TJ = 25C 0.95 0.7 1.0 0.95 0.8 1.1 0.85 0.7 1.0 1.0 0.8 1.1 1.15 1.0 1.25 1.3 1.2 1.4 10 1.15 0.95 1.3 1.25 1.05 1.4 1.15 0.95 1.3 1.3 1.05 1.4 1.45 1.3 1.55 1.6 1.5 1.75 18 1.35 1.15 1.40 1.45 1.25 1.5 1.4 1.2 1.6* 1.6 1.4 1.7* 1.7 1.55 1.8* 1.9 1.8 2.0* 25 Mhos V Symbol Test Conditions Temperature Min Typ Max Unit Fall Time (Resistive) Fall Time (Inductive) Rise Time http://onsemi.com 3 NGP8203N TYPICAL ELECTRICAL CHARACTERISTICS 400 IA, AVALANCHE CURRENT (A) 350 SCIS ENERGY (mJ) 300 250 200 150 100 50 0 0 2 4 6 VCC = 14 V VGE = 5.0 V RG = 1000 W 8 10 INDUCTOR (mH) TJ = 175C TJ = 25C 30 25 20 15 10 5 0 -50 L = 1.8 mH L = 3.0 mH VCC = 14 V VGE = 5.0 V RG = 1000 W L = 10 mH -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) Figure 1. Self Clamped Inductive Switching VCE, COLLECTOR TO EMITTER VOLTAGE (V) 2.0 IC, COLLECTOR CURRENT (A) 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0.0 -50 VGE = 4.5 V -25 0 25 50 75 100 125 150 175 IC = 25 A IC = 20 A IC = 15 A IC = 10 A IC = 7.5 A 60 50 40 30 20 10 0 Figure 2. Open Secondary Avalanche Current vs. Temperature VGE = 10 V 5V TJ = 175C 3.5 V 3V 2.5 V 4.5 V 4V 0 1 2 3 4 5 6 7 8 TJ, JUNCTION TEMPERATURE (C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector-to-Emitter Voltage vs. Junction Temperature 60 IC, COLLECTOR CURRENT (A) 50 40 TJ = 25C 30 20 10 0 3V 3.5 V IC, COLLECTOR CURRENT (A) VGE = 10 V 5V 4.5 V 4V 60 Figure 4. Collector Current vs. Collector-to-Emitter Voltage VGE = 10 V 50 5V 40 TJ = -40C 30 20 4.5 V 4V 3.5 V 3V 10 0 2.5 V 0 1 2 3 4 5 6 7 8 2.5 V 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 5. Collector Current vs. Collector-to-Emitter Voltage Figure 6. Collector Current vs. Collector-to-Emitter Voltage http://onsemi.com 4 NGP8203N TYPICAL ELECTRICAL CHARACTERISTICS VCE = 5 V COLLECTOR TO EMITTER LEAKAGE CURRENT (mA) 45 IC, COLLECTOR CURRENT (A) 40 35 30 25 20 15 10 5 0 0 0.5 1 TJ = 175C 1.5 2 2.5 TJ = -40C 3 3.5 4 TJ = 25C 10000 1000 100 10 VCE = 200 V 1.0 0.1 -50 VCE = -24 V -25 0 25 50 75 100 125 150 175 VGE, GATE TO EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 7. Transfer Characteristics Figure 8. Collector-to-Emitter Leakage Current vs. Temperature 10000 2.50 GATE THRESHOLD VOLTAGE (V) 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 -50 -25 0 25 50 75 100 125 150 175 Mean + 4 s Mean - 4 s Mean C, CAPACITANCE (pF) 1000 100 10 1.0 0.1 Ciss Coss Crss 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 9. Gate Threshold Voltage vs. Temperature 12 10 SWITCHING TIME (ms) 8 6 4 2 0 25 VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A RL = 33 W 50 75 100 125 150 175 12 10 SWITCHING TIME (ms) 8 6 4 2 0 25 Figure 10. Capacitance vs. Collector-to-Emitter Voltage tfall tdelay VCC = 300 V VGE = 5.0 V RG = 1000 W IC = 9.0 A L = 300 mH tdelay tfall 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 11. Resistive Switching Fall Time vs. Temperature http://onsemi.com 5 Figure 12. Inductive Switching Fall Time vs. Temperature NGP8203N R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) 100 Duty Cycle = 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJA(t) For D=1: RqJC X R(t) for t 0.1 s 10 100 1000 Figure 13. Transient Thermal Resistance (Non-normalized Junction-to-Ambient) RqJC(t), TRANSIENT THERMAL RESISTANCE (C/Watt) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.000001 P(pk) t1 t2 Single Pulse 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 t,TIME (S) 0.01 0.1 1 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RqJC(t) Figure 14. Best Case Transient Thermal Resistance (Non-normalized Junction-to-Case Mounted on Cold Plate) http://onsemi.com 6 NGP8203N PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AD SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 GATE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 -T- B 4 F T C S Q 123 A U K H Z L V G D N R J STYLE 9: PIN 1. 2. 3. 4. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NGP8203N/D |
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